Ionized impurity scattering in isotopically engineered, compensated Ge:Ga,As

Materials Science Forum

Volumn 258-263, Issue PART 1, 1997, Pages 77-82

  Itoh, K M ^a   Kinoshita, T ^a   Walukiewicz, W ^b   Beeman, J W ^b   Haller, E E ^b,c   Muto, J ^a   Farmer, J W ^d   Ozhogin, V I ^e  

^a KEIO UNIVERSITY   (Japan)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

^d UNIVERSITY OF MISSOURI   (United States)

^e KURCHATOV INSTITUTE   (Russian Federation)

Author keywords

Compensated semiconductors; Ionized impurity scattering; Mobility

Indexed keywords

CRYSTAL IMPURITIES; ELECTRON SCATTERING; IONIZATION OF SOLIDS; LOW TEMPERATURE PHENOMENA;

HALL MOBILITY; IONIZED IMPURITY SCATTERING;

SEMICONDUCTING GERMANIUM;

EID: 0031389472     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.258-263.77     Document Type: Article

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