Statistical study of subthreshold characteristics in polycrystalline silicon thin-film transistors

Journal of Applied Physics

Volumn 94, Issue 12, 2003, Pages 7789-7795

  Kitahara, Yoshiyuki ^a   Takagi, Shigeyuki ^a   Sano, Nobuyuki ^b  

^a TOSHIBA CORPORATION   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; COMPUTER SIMULATION; DIFFUSION; GLASS; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; LIQUID CRYSTAL DISPLAYS; POLYCRYSTALLINE MATERIALS; SILICON;

CAUGHEY-THOMAS MODEL; CHANNEL RESISTANCE;

THIN FILM TRANSISTORS;

EID: 0346935141     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1629154     Document Type: Article

References (22)

1. A. Hara, Y. Mishima, T. Kakehi, F. Takeuchi, M. Takei, K. Yoshino, K. Suga, M. Chida, and N. Sasaki, Tech. Dig. - Int. Electron Devices Meet. 2001, 34.2.1 (2001).
2. M. Nerding, R. Dassow, S. Christiansen, J. R. Kohler, L. Krinke, J. H. Werner, and H.-P. Strunk, J. Appl. Phys. 91, 4125 (2002).
3. T. C. Leung, C. F. Cheng, and M. C. Poon, IEEE Hong Kong Electron Device Meet. 2001, 93.
4. K.-C. Park, J.-H. Lee, I.-H. Song, S.-H. Jung, and M.-K. Han, J. Non-Cryst. Solids 299, 1330 (2002).
5. C.-L. Fan and M.-C. Chen, Electrochem. Solid-State Lett. 5, G75 (2002).
6. R. Carluccio, S. Cina, G. Fortunato, S. Friligkos, and J. Stoemenos, Thin Solid Films 296, 57 (1997).
7. G. A. Swartz, J. Appl. Phys. 53, 712 (1982).
8. M. Hack and M. Shur, J. Appl. Phys. 54, 5858 (1985).
9. M. Hack and M. Shur, J. Appl. Phys. 58, 997 (1985).
10. A. Pellegrini, L. Colalongo, M. Valdinoci, and M. Rudan, IEEE Trans. T-CAD 15, 1324 (1996).
11. L. Colalongo, M. Valdinoci, A. Pellegrini, and M. Rudan, IEEE Trans. Electron Devices 45, 826 (1998).
12. O. K. B. Lui, M. J. Quinn, S. W.-B. Tam, T. M. Brown, P. Migliorato, and H. Ohshima, IEEE Trans. Electron Devices 45, 213 (1998).
13. R. Guerrieri, P. Ciamppolini, A. Gnudi, M. Rudan, and G. Baccarani, IEEE Trans. Electron Devices 33, 1201 (1986).
14. W. S. Shockley and W. T. Read, Phys. Rev. 87, 835 (1952).
15. T. K. A. Chou and J. Kanicki, Jpn. J. Appl. Phys., Part 1 38, 2251 (1999).
16. M. Kimura, T. Eguchi, S. Inoue, and T. Shimoda, Jpn. J. Appl. Phys., Part 1 39, 775 (2000).
17. M. Kimura, S. Inoue, T. Shimoda, and T. Eguchi, J. Appl. Phys. 89, 596 (2001).
18. Y. Kitahara, S. Takagi, S. Uchikoga, and J. Tsutsumi, Extended Abstracts Japan Society of Applied Physics and Related Societies, 48th Spring Meeting (2001), p. 29p-ZS-2.
19. Y. Kitahara, S. Toriyama, and N. Sano, Jpn. J. Appl. Phys. Lett. 42, L634 (2003).
20. D. M. Caughey and R. E. Thomas, Proc. IEEE 55, 2192 (1967).
21. J. W. Seto, J. Appl. Phys. 46, 5247 (1975).
22. G. Baccarani, B. Ricco, and G. Spadini, J. Appl. Phys. 49, 5565 (1978).