AC analysis of amorphous silicon devices

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems

Volumn 15, Issue 11, 1996, Pages 1324-1331

  Pellegrini, Aurelio ^a   Colalongo, Luigi ^a   Valdinoci, Marina ^a   Rudan, Massimo ^a  

^a UNIVERSITY OF BOLOGNA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; BAND STRUCTURE; CAPACITANCE; CARRIER CONCENTRATION; ELECTRIC NETWORK ANALYSIS; ELECTRON ENERGY LEVELS; SEMICONDUCTOR DEVICE MODELS;

AMORPHOUS SILICON TRAP STATES; TRAP STATE DENSITY;

THIN FILM TRANSISTORS;

EID: 0030284556     PISSN: 02780070     EISSN: None     Source Type: Journal    
DOI: 10.1109/43.543765     Document Type: Article

References (9)

1. A. Pellegriiu, L. Colahmgo, M. Valdinoci, and M. Rudan, "AC analysis of amorphous-silicon structures," in H. C. dc Graaff and H. van Kranenburg, Eds., Proc. 1995 ESSDERC Con}., 1995, pp. 573-576.
2. J. Shaw and M. Hack, "An analitic model for calculating trapped charge in amorphous silicon," J, Applied Phys., vol. 64, 1988.
3. [31 A. Gnudi. P. Ciampolini, R. Guerrieri, M. Rudan, and G. Baccarani, "Small-signal analysis of semiconductor devices containing generationrecombination centers," in J. J. H. Miller, Ed., Proc. NASECODE V Conf. Dublin: Boole, 1987, pp. 207-212 .
4. M. Shur, M. Hack, and J. G. Shaw, "A new analytic model for amorphous silicon thin-film transistors," J. Applied Phys., vol. 66, pp. 3371-3380, 1989.
5. M. Shur. M. Hack, J. G. Shaw, and R. A. Martin, "Capacitance-voltage characteristics of amorphous silicon thin-film transistors," J. Applied Phys., vol. 66, pp. 3381-3385, 1989.
6. [61 G. Baccarani, R. Guerrieri, P. Ciampolini, and M. Rudan, "HFIELDS: a highly flexible 2-D semiconductor-device analysis program," in J. J. H. Miller. Ed., Proc. NASECODE V Conf. Dublin: Boole, 1985, pp. 3-12.
7. S. M. Sze, Physics of Semiconductor Devices. New York: Wiley, second ed., 1981.
8. D. V. Lang, "Deep-level transient spectroscopy: A new method to characterize traps in semiconductors,'' J. Applied Phys., vol. 45, no. 7, pp. 3023 3032, 1974.
9. B. W. Wessels, "Determination of deep levels in Cu-Doped GaP using transient-current spectroscopy," J. Applied Phis., vol. 47, no. 3, pp. 1131-1133. 1976.