Dynamic modeling of amorphous- and polycrystalline-silicon devices

IEEE Transactions on Electron Devices

Volumn 45, Issue 4, 1998, Pages 826-833

  Colalongo, L ^a,b   Valdinoci, M ^a   Pellegrini, A ^a   Rudan, M ^a  

^a UNIVERSITY OF BOLOGNA   (Italy)

^b UNIVERSITY OF TRENTO   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

COMPLEX ENERGY; ELECTRICAL CHARACTERISTIC; LOCALIZED STATE; NEW EFFICIENT METHOD; NUMERICAL APPROACHES; REALISTIC DEVICES; SEMICONDUCTOR EQUATIONS; THIN-FILM TRANSISTOR (TFTS);

ELECTRON DEVICES; ELECTRONICS ENGINEERING;

AMORPHOUS MATERIALS;

EID: 0001437561     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.662787     Document Type: Article

References (10)

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