Two-dimensional numerical simulation of solid-phase-crystallized polysilicon thin-film transistor characteristics

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 4 B, 1999, Pages 2251-2255

  Chou, Tsung Kuan A ^a   Kanicki, Jerzy ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

Density of state (DOS); Grain boundary; Interface; OFF state; ON state; Polysilicon (poly Si); Subthreshold; Thin film transistors (TFTs); Two dimensional (2 D) numerical simulation

Indexed keywords

EID: 4243968042     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.2251     Document Type: Article

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