Poly silicon film formation by nickel-induced-lateral-crystallization and pulsed rapid thermal annealing

Proceedings of the IEEE Hong Kong Electron Devices Meeting

Volumn , Issue , 2001, Pages 93-96

  Leung, T C ^a   Cheng, C F ^a   Poon, M C ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

CTA; Growth rate; NILC; PRTA

Indexed keywords

AMORPHOUS SILICON; CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; FILM GROWTH; NICKEL; RAPID THERMAL ANNEALING; THIN FILM TRANSISTORS;

NICKEL INDUCED LATERAL CRYSTALLIZATION (NILC);

POLYSILICON;

EID: 0034829306     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. Characterization of the MIC/MILC interface and its effects on the performance of MILC thin-film transistors
2. Structural and electrical properties of polycrystalline silicon produced by low-temperature Ni silicide mediated crystallization of the amorphous phase
3. Super thin-film transistor with SOI CMOS performance formed by a novel grain enhancement method