A new grain boundary model for drift-diffusion device simulations in polycrystalline silicon thin-film transistors

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 42, Issue 6 B, 2003, Pages

  Kitahara, Yoshiyuki ^a   Toriyama, Shuichi ^b   Sano, Nobuyuki ^b  

^a TOSHIBA CORPORATION   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

2D device simulation; Fluctuation; Grain boundary model; Polycrystalline silicon; Thin film transistor; Threshold voltage

Indexed keywords

COMPUTER SIMULATION; DIFFUSION IN SOLIDS; GRAIN BOUNDARIES; POLYSILICON; THRESHOLD VOLTAGE;

DRIFT DIFFUSION;

THIN FILM TRANSISTORS;

EID: 0041363409     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.l634     Document Type: Article

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