Structural and optical characteristics of self-organized InAs quantum dots grown on GaAs (3 1 1)A substrates

Journal of Crystal Growth

Volumn 200, Issue 1-2, 1999, Pages 70-76

  Xu, Huaizhe ^a   Gong, Qian ^a   Xu, Bo ^a   Jiang, Weihong ^a   Wang, Jizheng ^a   Wei Zhou, ^a   Wang, Zhanguo ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ATOMIC FORCE MICROSCOPY; CHARGE CARRIERS; DENSITY (SPECIFIC GRAVITY); DISLOCATIONS (CRYSTALS); INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; WETTING;

EXCITATION POWER; RED SHIFT; SELF ASSEMBLY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0033116660     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01241-X     Document Type: Article

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