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Journal of Applied Physics

Volumn 86, Issue 3, 1999, Pages 1456-1459

A comparison of photoluminescence properties of InGaAs/GaAs quantum dots with a single quantum well

(6) Kong, Mei Ying a Wang, Xiao Liang a Pan, Dong a Zeng, Yi Ping a Wang, J b Ge, Weikun b

a INSTITUTE OF SEMICONDUCTORS (China)

b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR SUPERLATTICES; THERMAL EFFECTS;

STRAIN ENERGY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0032606909 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.370912 Document Type: Article

Times cited : (14)

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