Temperature dependence of the dielectric response of anodized Al-Al2O3-metal capacitors

Journal of Applied Physics

Volumn 93, Issue 6, 2003, Pages 3461-3469

  Hickmott, T W ^a  

^a STATE UNIVERSITY OF NEW YORK   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ANODES; FREQUENCIES; INTERFACES (MATERIALS); PERMITTIVITY; THERMAL EFFECTS;

DIELECTRIC RESPONSE;

CAPACITORS;

EID: 0037445023     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1544073     Document Type: Article

References (46)

1. T. Homma, Mater. Sci. Eng., R. 23, 242 (1999).
2. D. A. Buchanan, IBM J. Res. Dev. 43, 245 (1999).
3. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. 89, 5243 (2001).
4. C. A. Mead, Phys. Rev. Lett. 6, 545 (1961).
5. H. Y. Ku and F. G. Ullman, J. Appl. Phys. 35, 265 (1964).
6. J. G. Simmons, Appl. Phys. Lett. 6, 54 (1965).
7. A. A. Kornyshev, M. A. Vorotyntsev, and J. Ulstrup, Thin Solid Films 75, 105 (1981).
8. J. Krupski, Phys. Status Solidi B 157, 199 (1990).
9. A. F. Hebard, S. A. Ajuria, and R. H. Eick, Appl. Phys. Lett. 51, 1349 (1987).
10. K. T. McCarthy, S. B. Arnason, and A. F. Hebard, Appl. Phys. Lett. 74, 302 (1999).
11. C. T. Black and J. J. Welser, IEEE Trans. Electron Devices 46, 776 (1999).
12. M. Kremar, W. M. Saskow, and A. Zangwill, Appl. Phys. Lett. 77, 3797 (2000).
13. A. K. Theophilou and A. Modinos, Phys. Rev. B 6, 801 (1972).
14. J. Halbritter, Z. Phys. B 31, 19 (1978).
15. T. W. Hickmott, J. Appl. Phys. 89, 5502 (2001).
16. A. K. Jonscher, Dielectric Relaxation in Solids (Chelsea, London, 1983), p. 67.
17. E. H. Nicollian and J. R. Brews, MOS Physics and Technology (Wiley, New York, 1982), p. 176.
18. J. Lowell and A. C. Rose-Innes, Adv. Phys. 29, 947 (1980).
19. M. Saint Jean, S. Hudlet, C. Guthmann, and J. Berger, Eur. Phys. J. B 12, 471 (1999).
20. F. Argall and A. K. Jonscher, Thin Solid Films 2, 185 (1968).
21. P. J. Harrop, G. C. Wood, and C. Pearson, Thin Solid Films 2, 457 (1968).
22. C. J. Dell'Oca, Thin Solid Films 26, 371 (1975).
23. C. N. Ajit and S. R. Jawalekar, Thin Solid Films 37, 85 (1976).
24. H. Birey, J. Appl. Phys. 48, 5209 (1977).
25. H. Birey, J. Appl. Phys. 49, 2898 (1978).
26. G. Delaunay, F. Ropars, and J. Despujols, Thin Solid Films 87, 127 (1982).
27. L. M. Kosjuk and L. L. Odynets, Thin Solid Films 302, 235 (1997).
28. K. Ozawa and T. Majima, J. Appl. Phys. 80, 5828 (1996).
29. K. Ozawa and T. Majima, J. Appl. Phys. 85, 1883 (1999).
30. D. Diesing, A. W. Hassel, and M. M. Lohrengel, Thin Solid Films 342, 282 (1999).
31. D. Deger and K. Ululas, J. Appl. Phys. 89, 8101 (2001).
32. A. K. Jonscher, Dielectric Relaxation in Solids (Chelsea, London, 1983), p. 208.
33. A. K. Jonscher, J. Phys. D 32, R57 (1999).
34. J. C. Dyre and T. B. Schrader, Rev. Mod. Phys. 72, 873 (2000).
35. A. G. Hunt, Philos. Mag. B 81, 875 (2001).
36. W. J. Bernard and J. W. Cook, J. Electrochem. Soc. 106, 643 (1959).
37. M. M. Lohrengel, Mater. Sci. Eng., R. 11, 243 (1993).
38. M. J. Dignam and P. J. Ryan, Can. J. Chem. 46, 535 (1968).
39. A. Goswami and A. P. Goswami, Thin Solid Films 16, 175 (1973).
40. S. Zafar, R. E. Jones, P. Chu, B. White, B. Jiang, D. Taylor, P. Zurcher, and S. Gillespie, Appl. Phys. Lett. 72, 2820 (1998).
41. G. Landry, Y. Dong, J. Du, X. Xiang, and J. Q. Xiao, Appl. Phys. Lett. 78, 501 (2001).
42. K. L. Chopra, J. Appl. Phys. 36, 655 (1965).
43. M. D. Groner, J. W. Elam, F. H. Fabreguette, and S. M. George, Thin Solid Films 413, 186 (2002).
44. J. Antula, Phys. Lett. 25A, 308 (1967).
45. C. Vodenicharov, E. Klain, L. Andreeva, and S. Ikonopisov, Phys. Lett. 27A, 336 (1968).
46. H. Enrenreich and H. R. Philipp, Phys. Rev. 128, 1622 (1962).