Inner cylinder Ta2O5 capacitor process for 1Gb DRAM and beyond

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1999, Pages 97-98

  Won, Seok Jun ^a   Hyung, Yong Woo ^a   Nam, Kab Jin ^a   Kim, Young Dae ^a   Park, Ki Yeon ^a   Park, Young Wook ^a   Lee, Sang In ^a   Lee, Moon Yong ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; DYNAMIC RANDOM ACCESS STORAGE; ELECTRIC POWER SUPPLIES TO APPARATUS; LEAKAGE CURRENTS; PERMITTIVITY MEASUREMENT; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; TANTALUM COMPOUNDS;

POST ANNEAL PROCESS; RAPID THERMAL NITRIDATION; TANTALUM OXIDE; TIME DEPENDENT DIELECTRIC BREAKDOWN;

MOS CAPACITORS;

EID: 0033280710     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)