Novel MIS Al2O3 capacitor as a prospective technology for Gbit DRAMs

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2000, Pages 42-43

  Park, In Sung ^a   Lee, Byoung Taek ^a   Choi, Sung Je ^a   Im, Jae Soon ^a   Lee, Seung Hwan ^a   Park, Ki Yeon ^a   Lee, Joo Won ^a   Hyung, Yong Woo ^a   Kim, Yeong Kwan ^a   Park, Heung Soo ^a   Park, Young Wook ^a   Lee, Sang In ^a   Lee, Moon Yong ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; CAPACITORS; DEPOSITION; DIELECTRIC PROPERTIES; DYNAMIC RANDOM ACCESS STORAGE; LEAKAGE CURRENTS;

METAL INSULATOR SILICON STRUCTURES; STORAGE CAPACITANCE;

VLSI CIRCUITS;

EID: 0033712798     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)