A highly manufacturable 110nm EDRAM process with Al2O 3 stack MIM capacitor for cost effective high density, high speed, low voltage ASIC memory applications

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2003, Pages 75-76

  Fishburn, Fred ^a   Kauffman, Ralph ^a   Lane, Richard ^a   McDaniel, Terry ^a   Schofield, Kevin ^a   Southwick, Scott ^a   Turi, Ray ^a   Wang, Hongmei ^a  

^a MICRON TECHNOLOGY INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; COST EFFECTIVENESS; DYNAMIC RANDOM ACCESS STORAGE; GATES (TRANSISTOR); LOGIC CIRCUITS; LOGIC DESIGN; MIM DEVICES; PROCESS CONTROL; ALUMINA; COMPUTER CIRCUITS; TEMPERATURE;

MEMORY CELLS;

APPLICATION SPECIFIC INTEGRATED CIRCUITS; ALUMINUM OXIDE;

CELL-SIZE; COST EFFECTIVE; DRAM TECHNOLOGY; EMBEDDED DRAM; GATE PATTERNS; HIGH SPEED; LOW VOLTAGES; MEMORY APPLICATIONS; MIM CAPACITORS; PERFORMANCE;

EID: 0141649573     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. N. Yanagiya, et al, "65nm CMOS Technology(CMOSS) with high density embedded memories for broadband microprocessor applications", IEDM2002, p57-60.
2. K. Aurangzeb, et al, "A 150MHz Graphics Rendering Processor with 256Mb Embedded DRAM", ISSCC2001, p150-151.
3. 3 Trench capacitor DRAM for Sub-100 Technology", IEDM 2002, p839-842.