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Thin Solid Films

Volumn 415, Issue 1-2, 2002, Pages 1-4

In-situ stress measurement during the ion implantation-induced doping of gallium nitride

(6) Sienz, S a Rauschenbach, B a Wenzel, A b Lell, A c Bader, S c Harle V c

a LEIBNIZ INSTITUTE OF SURFACE ENGINEERING IOM (Germany)

b UNIVERSITY OF AUGSBURG (Germany)

c OSRAM OPTO SEMICONDUCTORS GMBH (Germany)

Author keywords

Gallium; Ion implantation; Nitrides; Stress

Indexed keywords

AMORPHIZATION; DOPING (ADDITIVES); FILM GROWTH; GALLIUM NITRIDE; ION IMPLANTATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; STRESS RELAXATION;

STRESS MEASUREMENT;

THIN FILMS;

EID: 0036669980 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(02)00620-X Document Type: Article

Times cited : (6)

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