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Applied Physics Letters

Volumn 73, Issue 10, 1998, Pages 1406-1408

Lattice location of Si in ion implanted GaN

(2) Kobayashi, H a Gibson, W M a

a STATE UNIVERSITY OF NEW YORK (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000277394 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.121958 Document Type: Article

Times cited : (35)

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