Effect of the density of collision cascades on implantation damage in GaN

Applied Physics Letters

Volumn 78, Issue 18, 2001, Pages 2694-2696

  Kucheyev, S O ^a   Williams, J S ^a   Titov, A I ^b   Li, G ^c   Jagadish, C ^a  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^b PETER THE GREAT ST PETERSBURG POLYTECHNIC UNIVERSITY   (Russian Federation)

^c The Health Bureau of Kaohsiung County Government   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035971695     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1369149     Document Type: Article

References (13)

1. See, for example, recent reviews by S. J. Pearton, J. C. Zolper, R. J. Shul, and F. Ren, J. Appl. Phys. 86, 1 (1999); S. C. Jain, M. Willander, J. Narayan, and R. Van Overstraeten, ibid. 87, 965 (2000), and references therein.
2. See, for example, recent reviews by S. J. Pearton, J. C. Zolper, R. J. Shul, and F. Ren, J. Appl. Phys. 86, 1 (1999); S. C. Jain, M. Willander, J. Narayan, and R. Van Overstraeten, ibid. 87, 965 (2000), and references therein.
3. H. H. Tan, J. S. Williams, J. Zou, D. J. Cockayne, S. J. Pearton, and R. A. Stall, Appl. Phys. Lett. 69, 2364 (1996).
4. S. O. Kucheyev, J. S. Williams, C. Jagadish, G. Li, and S. J. Pearton, Appl. Phys. Lett. 76, 3899 (2000).
5. S. O. Kucheyev, J. S. Williams, C. Jagadish, J. Zou, and G. Li, Phys. Rev. B 62, 7510 (2000).
6. S. O. Kucheyev, J. S. Williams, C. Jagadish, V. S. J. Craig, and G. Li, Appl. Phys. Lett. 77, 1455 (2000).
7. S. O. Kucheyev, J. S. Williams, J. Zou, C. Jagadish, and G. Li, Appl. Phys. Lett. 77, 3577 (2000).
8. S. O. Kucheyev, J. S. Williams, J. Zou, C. Jagadish, and G. Li, Appl. Phys. Lett. 78, 1373 (2001).
9. S. O. Kucheyev, J. S. Williams, J. Zou, J. E. Bradby, C. Jagadish, and G. Li, Phys. Rev. B 63, 113202 (2001).
10. For a detailed discussion of the molecular effect, see, for example, J. A. Davies, in Ion Implantation and Beam Processing, edited by J. S. Williams and J. M. Poate (Academic, Sydney, Australia, 1984), p. 81; A. I. Titov and S. O. Kucheyev, Nucl. Instrum. Methods Phys. Res. B 149, 129 (1999), and references therein.
11. For a detailed discussion of the molecular effect, see, for example, J. A. Davies, in Ion Implantation and Beam Processing, edited by J. S. Williams and J. M. Poate (Academic, Sydney, Australia, 1984), p. 81; A. I. Titov and S. O. Kucheyev, Nucl. Instrum. Methods Phys. Res. B 149, 129 (1999), and references therein.
12. See, for example, J. S. Williams, Rep. Prog. Phys. 49, 491 (1986).
13. A similar scenario may be proposed to explain the molecular effect previously observed in the case of light-ion bombardment of Si, where the molecular effect is usually attributed to nonlinear energy spike processes resulting from a spatial overlap of (relatively dense) collision subcascades. However, an increase in the defect clustering efficiency with increasing the local density of ion-beam-generated point defects seems to be an alternative explanation for the molecular effect in the case of light-ion bombardment of Si.