A BSIM3v3 and DFIM based ferroelectric field effect transistor model

IEICE Transactions on Electronics

Volumn E83-C, Issue 8, 2000, Pages 1324-1329

  Ullmann, Marc ^a,b   Goebel, Holger ^b   Hoenigschmid, Heinz ^a   Haneder, Thomas ^a  

^a HELMUT SCHMIDT UNIVERSITY   (Germany)

^b INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

FEMFET; Ferroelectric; MFIS; Modeling; Simulation

Indexed keywords

COMPUTER SIMULATION; FERROELECTRIC DEVICES; GATES (TRANSISTOR); HYSTERESIS; MATHEMATICAL MODELS; MOS CAPACITORS; POLARIZATION;

CIRCUIT SIMULATION; DISTRIBUTION FUNCTION INTEGRAL METHOD; FERROELECTRIC FIELD EFFECT TRANSISTOR; GATE FERROELECTRIC;

MOSFET DEVICES;

EID: 0034248867     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (11)

1. H. Gocbel, M. Ullmann, G. Schindler, and M. Kastncr, "Distribution function integral method for modeling ferroelectric devices," SSDM, pp.386-387, Tokyo, Japan, Sept. 1999.
2. BSIM3v3.2 Manual Copyright ©1997-1998 UC Berkeley.
3. S.L. Miller and P.J. McWhortcr, "Physics of the ferroelectric nonvolatile memory field effect transistor," J. Appl. Phys., vol.72, pp.5999-6010, Dec. 1992.
4. S.L. Miller, R.D. Nasby, J.R. Schwank, M.S. Rodgers, and P.V. Dressendorfer, "Device modeling of ferroelectric capacitors," J. Appl. Phys., vol.68, pp.G4G3-6471, Dec. 1990.
5. D.E. Dunn and C.A. Paz de Araujo, "A generalized ferroelectric capacitor modeling methodology," Integrated Ferroelectrics, vol.3, p.13, 1993.
6. B. Jiang, P. Zürcher, R.E. Joncs, S.J. Gillespie, and J.C. Lee, "Computationally efficient ferroelectric capacitor model for circuit simulation," VLSI Symp. Tech. Dig., pp.141-142, 1997.
7. I.D. Mayergoyz, Mathematical models of hysteresis, Springer, New York, 1991.
8. M. Ullmann, H. Goebcl, H. Hoenigschmid, T. Haneder, and G.W. Dietz, "An accurate compact model for ferroelectric memory field effect transistors," SISPAD, pp.175-178, Kyoto, Japan, Sept. 1999.
9. J.R. Brews, Applied solid state science, Part A, ed. D. Kahng, Academic Press, New York, 1981.
10. Y. Tsividis, Operation and modeling of the MOJ5 Transistor, 2nd ed., McGraw-Hill, 1999.
11. A. Sheikholesalami and P.G. Gulak, "Transient modeling of ferroelectric capacitors for nonvolatile memories," Trans. UFFC, vol.43, no.3, pp.450-456, May 1996.