Electronic structures of Bi4Ti3O12 thin film and single crystal determined by resonant soft-x-ray emission spectroscopy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 11 B, 2002, Pages 7195-7197

  Higuchi, Tohru ^a   Kudoh, Kazuhide ^a   Takeuchi, Tomoyuki ^a   Masuda, Yoichiro ^b   Harada, Yoshihisa ^c   Shin, Shik ^c,d   Tsukamoto, Takeyo ^a  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

^b HACHINOHE INSTITUTE OF TECHNOLOGY   (Japan)

^c RIKEN   (Japan)

^d UNIVERSITY OF TOKYO   (Japan)

Author keywords

Bi4Ti3O12 (BIT); Electronic structure; Single crystal; Soft X ray emission spectroscopy (SXES); Thin film; Ti O hybridization effect

Indexed keywords

ELECTRONIC STRUCTURE; FERROELECTRIC MATERIALS; SINGLE CRYSTALS; THIN FILMS; X RAY ANALYSIS;

PARTIAL DENSITY OF STATES (PDOS); SOFT-X-RAY EMISSION SPECTROSCOPY (SXES); TI-O HYBRIDIZATION EFFECT;

BISMUTH COMPOUNDS;

EID: 0344864168     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.41.7195     Document Type: Article

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