Growth of Bi4Ti3O12 thin film by two-dimensional RF magnetron sputtering with Bi2O3 and TiO2 targets

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 3 A, 2002, Pages 1536-1537

  Tanaka, Masashi ^a   Higuchi, Tohru ^a   Kudoh, Kazuhide ^a   Tsukamoto, Takeyo ^a  

^a CANON INC   (Japan)

Author keywords

Bi4Ti3O12 (BIT); Grain; P V hysteresis loop; Pt Ti SiO2 Si substrate; RF magnetron sputtering; RF power; Thin film

Indexed keywords

COERCIVE FORCE; ELECTRIC POTENTIAL; HYSTERESIS; LIGHT POLARIZATION; MAGNETRON SPUTTERING; PERMITTIVITY; SEMICONDUCTING BISMUTH COMPOUNDS; SUBSTRATES; TITANIUM DIOXIDE;

HYSTERESIS LOOPS;

FERROELECTRIC THIN FILMS;

EID: 0036508682     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.1536     Document Type: Article

References (13)