Electronic structure of Bi4Ti3O12 thin film by soft-X-ray emission spectroscopy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 9 B, 2001, Pages 5803-5805

  Higuchi, Tohru ^a   Tanaka, Masashi ^a   Kudoh, Kazuhide ^a   Takeuchi, Tomoyuki ^a   Harada, Yoshihisa ^b   Shin, Shik ^b,c   Tsukamoto, Takeyo ^a  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

^b RIKEN   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

Author keywords

Bi4Ti3O12 thin film; Hybridization effect; Soft X ray Raman scattering; SXES; Valence band

Indexed keywords

BISMUTH COMPOUNDS; ELECTRONIC DENSITY OF STATES; ELECTRONIC STRUCTURE; RAMAN SCATTERING; X RAY SPECTROSCOPY;

SOFT-X-RAY EMISSION SPECTROSCOPY (SXES);

FERROELECTRIC THIN FILMS;

EID: 0035455529     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.5803     Document Type: Article

References (17)