Analytical charge-control and I-V model for submicrometer and deep-submicrometer MOSFETs fully comprising quantum mechanical effects

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems

Volumn 20, Issue 4, 2001, Pages 495-502

  Ma, Yutao ^b   Liu, Lilian ^b   Tian, Lilin ^b   Yu, Zhiping ^a,c   Li, Zhijian ^b  

^a IEEE

^b TSINGHUA UNIVERSITY   (China)

^c STANFORD UNIVERSITY   (United States)

Author keywords

Charge control model; MOS devices; MOSFET model; Quantum mechanical effects; Semiconductor device modeling; Short channel effects

Indexed keywords

CARRIER CONCENTRATION; CURRENT VOLTAGE CHARACTERISTICS; MATHEMATICAL MODELS; QUANTUM THEORY; SEMICONDUCTOR DEVICE STRUCTURES; THRESHOLD VOLTAGE;

CHARGE CONTROL MODEL; SHORT CHANNEL EFFECTS;

MOSFET DEVICES;

EID: 0035309841     PISSN: 02780070     EISSN: None     Source Type: Journal    
DOI: 10.1109/43.918208     Document Type: Article

References (25)