Ion-cutting of Si onto glass by pulsed and direct-current plasma immersion ion implantation

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 21, Issue 5, 2003, Pages 2109-2113

  Lu, F ^a   Qiao, D ^a   Cai, M ^a   Yu, P K L ^a   Lau, S S ^a   Fu, R K Y ^b   Hung, L S ^b   Li, C P ^b   Chu, P K ^b   Chien, H C ^c   Liou, Y ^c  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^c Evans Taiwan ^*  (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DEFECTS; ELECTRIC PROPERTIES; GLASS; ION IMPLANTATION; PLASMA APPLICATIONS; SECONDARY ION MASS SPECTROMETRY; SINGLE CRYSTALS; SURFACE PHENOMENA; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

EXFOLIATION; IMPLANTATION CHAMBER; ION CUTTING; PLASMA IMMERSION ION IMPLANTATION; VACUUM CONDITIONS;

SILICON WAFERS;

EID: 0242677564     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1609477     Document Type: Article

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