Single crystal Si layers on glass formed by ion cutting

Journal of Applied Physics

Volumn 92, Issue 6, 2002, Pages 3388-3392

  Cai, M ^a   Qiao, D ^a   Yu, L S ^a   Lau, S S ^a   Li, C P ^b   Hung, L S ^b   Haynes, Tony E ^c   Henttinen, K ^d   Suni, Ilkka ^d   Poon, V M C ^e   Marek, T ^f   Mayer, J W ^f  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^c OAK RIDGE NATIONAL LABORATORY   (United States)

^d VTT TECHNICAL RESEARCH CENTRE OF FINLAND   (Finland)

^e HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

^f ARIZONA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE MATRIXES; ANNEALING BEHAVIOR; CRYSTALLINE QUALITY; DEFECT-FREE; GLASS SUBSTRATES; HIGHER TEMPERATURES; ION CUTTING; OTHER APPLICATIONS; OXYGEN DIFFUSION; P TYPE CONDUCTIVITY; P-TYPE; ROOM TEMPERATURE; SHALLOW DONORS; SI LAYER; SI WAFER; SINGLE-CRYSTAL SI; SINGLE-CRYSTALLINE;

CRYSTALLINE MATERIALS; FLAT PANEL DISPLAYS; GLASS; GLASS BONDING; IONS; SILICON; SINGLE CRYSTALS; SUBSTRATES; WAFER BONDING;

SILICON WAFERS;

EID: 18644375886     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1492017     Document Type: Article

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