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Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 155, Issue 1, 1999, Pages 75-78

Surface metal contamination on silicon wafers after hydrogen plasma immersion ion implantation

(5) Fan, Zhineng a Zeng, Xuchu a Chu, Paul K a Chan, Chung b Watanabe, Masaharu c

a CITY UNIVERSITY OF HONG KONG (Hong Kong)

b Northeastern University (United States)

c Komatsu Electronic Metals Co Ltd (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONTAMINATION; FLUORESCENCE; HYDROGEN; ION BOMBARDMENT; ION IMPLANTATION; IRON; PLASMA APPLICATIONS; SILICON ON INSULATOR TECHNOLOGY; SPUTTERING; STAINLESS STEEL; X RAY SPECTROGRAPHS;

PLASMA IMMERSION ION IMPLANTATION (PIII); TOTAL REFLECTION X RAY FLUORESCENCE (TRXF) ANALYSIS;

SILICON WAFERS;

EID: 0032667563 PISSN: 0168583X EISSN: None Source Type: Journal
DOI: 10.1016/S0168-583X(99)00297-9 Document Type: Article

Times cited : (16)

References (13)

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