Oxygen related donors in Czochralski-grown silicon annealed at 465-650 °C

Journal of Physics and Chemistry of Solids

Volumn 60, Issue 3, 1999, Pages 353-358

  Prakash, Om ^a   Singh, S ^a  

^a G B PANT UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL GROWTH FROM MELT; ELECTRIC CONDUCTIVITY OF SOLIDS; NITROGEN; PRECIPITATION (CHEMICAL); SEMICONDUCTING BORON; SEMICONDUCTOR DOPING;

OXYGEN RELATED DONORS;

SEMICONDUCTING SILICON;

EID: 0032668308     PISSN: 00223697     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3697(98)00289-3     Document Type: Article

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