Interstitial-based vacancy annealing in 4H-SiC

Physica B: Condensed Matter

Volumn 308-310, Issue , 2001, Pages 645-648

  Rauls, E ^a   Staab, T E M ^b   Hajnal, Z ^a   Frauenheim, Th ^a  

^a UNIVERSITY OF PADERBORN   (Germany)

^b AALTO UNIVERSITY   (Finland)

Author keywords

Diffusion; Interstitials; SiC; Vacancies

Indexed keywords

ACTIVATION ENERGY; ANNEALING; CRYSTAL DEFECTS; CRYSTAL LATTICES; DIFFUSION; ELECTRIC CHARGE; IRRADIATION;

INTERSTITIAL DEFECTS;

SILICON CARBIDE;

EID: 0035670110     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(01)00776-1     Document Type: Article

References (10)

1. Silicon carbide