Calculation of hyperfine parameters of positively charged carbon vacancy in SiC

Physica B: Condensed Matter

Volumn 308-310, Issue , 2001, Pages 637-640

  Petrenko, T T ^a   Petrenko, T L ^a   Bratus, V Ya ^a   Monge, J L ^b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^b UNIVERSITÉ PARIS DESCARTES   (France)

Author keywords

Carbon vacancy; DFT calculation; Hyperfine parameters; SiC

Indexed keywords

APPROXIMATION THEORY; CARBON; CHEMICAL BONDS; COMPUTER SIMULATION; CRYSTAL DEFECTS; CRYSTAL SYMMETRY; DISCRETE FOURIER TRANSFORMS;

GAUSSIAN FUNCTIONS;

SILICON CARBIDE;

EID: 0035670885     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(01)00773-6     Document Type: Article

References (14)