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Volumn 433-435, Issue , 1999, Pages 896-899

Initial oxide-growth process on the Si (100) surface

(3) Uchiyama, Toshihro a Uda, Tsuyoshi a Terakura, Kiyoyuki b

a JT RES CENTER FOR ATOM TECHNOLOGY (Japan)

b NATL INST FOR ADV INTERDISC RES (Japan)

Author keywords

Density functional calculations; Low index single crystal surfaces; Oxidation; Silicon; Surface structure, morphology, roughness and topography

Indexed keywords

DIMERS; DISSOCIATION; MOLECULAR DYNAMICS; MORPHOLOGY; OXIDATION; PROBABILITY DENSITY FUNCTION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SUBSTITUTION REACTIONS; SURFACE ROUGHNESS; SURFACE STRUCTURE;

OXIDE GROWTH; OXYGEN ATOMS; SCANNING REFLECTION ELECTRON MICROSCOPY;

SURFACE PHENOMENA;

EID: 0033321988 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(99)00522-1 Document Type: Article

Times cited : (28)

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