Plasma cleaning and nitridation of sapphire substrates for AlxGa1-xN epitaxy as studied by x-ray photoelectron diffraction

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 16, Issue 4, 1998, Pages 2008-2015

  Seelmann Eggebert, M ^a   Zimmermann, H ^a   Obloh, H ^a   Niebuhr, R ^a   Wachtndorf, B ^b  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

^b AIXTRON AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0032353592     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.581303     Document Type: Article

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21. The small lateral relaxation of the oxygen atoms is neglected here.
22. The boundary condition of equal occupation probabilities for positions 4,5,6 and 7,8,9, respectively, was imposed.