Thermal stability of a-Si1-xCx:H films grown by PECVD with different gas sources

Physica B: Condensed Matter

Volumn 225, Issue 1-2, 1996, Pages 103-110

  Demichelis, F ^a   Giorgis, F ^a   Pirri, C F ^a   Tresso, E ^a  

^a POLITECNICO DI TORINO   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ANNEALING; CHEMICAL VAPOR DEPOSITION; ELECTRON SPIN RESONANCE SPECTROSCOPY; FILM GROWTH; INFRARED SPECTROSCOPY; OPTICAL VARIABLES MEASUREMENT; PHOTOLUMINESCENCE; PLASMA APPLICATIONS; THERMAL EFFECTS; THERMODYNAMIC STABILITY; VACUUM APPLICATIONS;

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

AMORPHOUS FILMS;

EID: 0030195788     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/0921-4526(96)00227-X     Document Type: Article

References (23)

1. F. Demichelis, G. Crovini, F. Giorgis, C.F. Pirri and E. Tresso, Diamond and Related Materials 4 (1995) 473.
2. F. Demichelis, F. Giorgis, C.F. Pirri and E. Tresso, Phil. Mag. A 72 (1995) 913.
3. S. Furukawa, in: Amorphous and Crystalline Silicon Carbide, Vol. 34, eds. by G.L. Harris and C.Y.W. Yang, (Springer Proc. in Physics, New York, 1987) p. 58.
4. J. Kanicki, Amorphous and Microcrystalline Semiconductor Devices, Vols. I & III (Artech House, 1991).
5. R. Rizzoli, R. Galloni, C. Summonte, F. Demichelis, C.F. Pirri, E. Tresso, G. Crovini, F. Giorgis, P. Rava and A. Madan, Amorphous Silicon Technology 1995, Vol. 377 (Mat. Res. Soc. Symp. Proc., Pittsburgh, Pennsylvania, 1995) p. 809.
6. Y. Hamakawa, Amorphous and Crystalline Silicon Carbide II, Vol. 43, eds. by M.M. Rahman, G.L. Harris and C.Y.W. Yang (Springer Proc. in Physics, New York, 1988) p. 164.
7. T. Furukawa, K. Sasaki and S. Furukawa, Amorphous and Crystalline Silicon Carbide, Vol. 34, eds. G.L. Harris, C.Y.W. Yang (Springer Proc. in Physics, New York, 1987) p. 156.
8. R.A. Street, Hydrogenated Amorphous Silicon (Cambridge Univ. Press, Cambridge, 1991) ch. 8.
9. L.R. Tessler and I. Solomon, Amorphous Silicon Technology, Vol. 336 (Mat. Res. Soc. Symp. Proc., Pittsburgh, Pennsylvania, 1994) p. 613.
10. R.S. Sussmann and R. Ogden, Phil. Mag. B 44 (1981) 137.
11. F. Demichelis, C.F. Pirri, E. Tresso, V. Rigato and G. DellaMea, J. Non-Cryst. Solids 128 (1991) 133.
12. G. DellaMea, F. Demichelis, C.F. Pirri, P. Rava, V. Rigato, T. Stapinski and E. Tresso, J. Non-Cryst. Solids 137/138 (1991) 95.
13. N.F. Mott and E.A. Davis, Electronic Processes in Non-Crystalline Solids (Cambridge Univ. Press, Cambridge, 1979).
14. R. Tsu, P. Menna and H. Mahan, Solar Cells 21 (1987) 189.
15. J. Bullot and M.P. Schmidt, Phys. Stat. Sol. (b) 143 (1987) 345.
16. F. Demichelis and C.F. Pirri, Solid State Phen. B 44-46 (1995) 385.
17. B. Dischler, A. Bubenzer and P. Koidl, Solid State Commun. 48 (1983) 105.
18. Y. Tawada, K. Tsuge, M. Kondo, H. Okamoto and Y. Hamakawa, J. Appl. Phys. 53 (1982) 5273.
19. D.R. McKenzie, R.C. McPhedran, N. Savvides and L.C. Botten, Phil. Mag. B 48 (1983) 341.
20. H. Wieder, M. Cardona and G.R. Guarnieri, Phys. Stat. Sol. (b) 92 (1979) 99.
21. K. Eberhardt, F. Lotter, M. Heintze, H.D. Mohring and G.H. Bauer, Amorphous Silicon Technology, Vol. 258 (Mat. Res. Soc. Symp. Proc., Pittsburgh, Pennsylvania, 1992) p. 673.
22. S.V. Chernyshov, E.I. Terukov, V.A. Vassilyev and A.S. Volkov, J. Non-Cryst. Solids 134 (1991) 218.
23. F. Demichelis, S. Schreiter and A. Tagliaferro, Phys. Rev. B 51 (1995) 2143.