Improvement in the optoelectronic properties of a-SiO:H films

Journal of Materials Science

Volumn 34, Issue 5, 1999, Pages 1051-1054

  Das, Debabrata ^a,b   Iftiquar, S M ^a   Das, Debajyoti ^a   Barua, A K ^a  

^a DEPARTMENT OF MATERIALS SCIENCE   (India)

^b Department of Physics   (India)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON DIOXIDE; DEGRADATION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HYDROGEN; LIGHT ABSORPTION; PARAMAGNETIC RESONANCE; PHOTOCONDUCTIVITY; PHOTOCURRENTS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON COMPOUNDS; SILICON SOLAR CELLS; ULTRAVIOLET RADIATION;

HYDROGENATED AMORPHOUS SILICON OXIDE; MULTIJUNCTION AMORPHOUS SILICON SOLAR CELLS; OPTOELECTRONIC PROPERTIES; RADIO FREQUENCY PLASMA ENHANCED CHEMICAL VAPOUR DEPOSITION;

AMORPHOUS FILMS;

EID: 0032650142     PISSN: 00222461     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1004500229385     Document Type: Article

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