Substrate dependence of initial growth of microcrystalline silicon in plasma-enhanced chemical vapor deposition

Journal of Applied Physics

Volumn 80, Issue 10, 1996, Pages 6061-6063

  Kondo, Michio ^a   Toyoshima, Yasutake ^a   Matsuda, Akihisa ^a   Ikuta, Kazuyuki ^b  

^a ELECTROTECHNICAL LABORATORY   (Japan)

^b NATL INST FOR ADV INTERDISC RES   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001614737     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.363565     Document Type: Article

References (8)

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6. K. Ikuta, Y. Toyoshima, S. Yamasaki, A. Matsuda, and K. Tanaka, J. Non-Cryst. Solids 198-200, 863 (1996).
7. A. Matsuda, K. Kumagai, and K. Tanaka, Jpn. J. Appl. Phys. 1 22, L34 (1983).
8. S. Hashimoto, T. Miyasato, and A. Hiraki, Jpn. J. Appl. Phys. 1 22, L748 (1983).