Supersonic jet epitaxy of single crystalline cubic SiC thin films on Si substrates from t-Butyldimethylsilane

Thin Solid Films

Volumn 324, Issue 1-2, 1998, Pages 124-128

  Boo, Jin Hyo ^a,b   Ustin, S A ^a   Ho, W ^a  

^a Laboratory of Atomic and Solid State Physics and Sibley School of Mechanical and Aerospace Engineering   (United States)

^b Sungkyunkwan University   (South Korea)

Author keywords

Epitaxy; Organometallic vapour deposition; Silicon; Silicon carbide

Indexed keywords

EPITAXIAL GROWTH; FILM GROWTH; SEMICONDUCTING SILICON; SILANES; SINGLE CRYSTALS; SUBSTRATES; THIN FILMS; VAPOR DEPOSITION;

SUPERSONIC JET EPITAXY (SJE);

SILICON CARBIDE;

EID: 0032121824     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)00351-4     Document Type: Article

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