-
1
-
-
0018478296
-
"MicroChannel plated detector,"
-
vol. 162, pp. 587-601, 1979.
-
J. L. Wiza, "MicroChannel plated detector," Nucl. Instr. Met., vol. 162, pp. 587-601, 1979.
-
Nucl. Instr. Met.
-
-
Wiza, J.L.1
-
2
-
-
84951273909
-
"MicroChannel imaging detectors for the ultraviolet,"
-
pp. 89-96, 1992.
-
O. H. W. Siegmund, M. A. Gumming, J. Stock, and D. Marsh, "MicroChannel imaging detectors for the ultraviolet," USA SP-356. pp. 89-96, 1992.
-
USA SP-356.
-
-
Siegmund, O.H.W.1
Gumming, M.A.2
Stock, J.3
Marsh, D.4
-
3
-
-
84957503941
-
"Charge-coupled device pinning technologies,"
-
1989, vol. 1071, pp. 153-169.
-
J. Janesick, T. Elliot, G. Fraschetti, S. Collins, M. M. Blouke. and B. Corrie, "Charge-coupled device pinning technologies," SPIE-Proc., 1989, vol. 1071, pp. 153-169.
-
SPIE-Proc.
-
-
Janesick, J.1
Elliot, T.2
Fraschetti, G.3
Collins, S.4
Blouke, M.M.5
Corrie, B.6
-
4
-
-
33747282299
-
"Ultraviolet and extreme ultraviolet response of CCD detectors,"
-
vol. 26, no. 10, pp. 972-980, 1987.
-
R. A. Stern, R. C. Catura, R. Kimble, M. Wienzenread, M. M. Blouke, R. Hiyes, D. M. Walton, and J. L. Culhane, "Ultraviolet and extreme ultraviolet response of CCD detectors," Opt. Eng., vol. 26, no. 10, pp. 972-980, 1987.
-
Opt. Eng.
-
-
Stern, R.A.1
Catura, R.C.2
Kimble, R.3
Wienzenread, M.4
Blouke, M.M.5
Hiyes, R.6
Walton, D.M.7
Culhane, J.L.8
-
5
-
-
0028493503
-
"Response analysis in the 300-2500 a spectral range of ultravioletenhanced CCD's,"
-
vol. 33, no. 8, pp. 2544-2552, 1994.
-
G. Naletto, G. Tondello, G. Bonanno, R. Di Benedetto, and S. Scudieri, "Response analysis in the 300-2500 A spectral range of ultravioletenhanced CCD's," Opt. Eng., vol. 33, no. 8, pp. 2544-2552, 1994.
-
Opt. Eng.
-
-
Naletto, G.1
Tondello, G.2
Bonanno, G.3
Di Benedetto, R.4
Scudieri, S.5
-
6
-
-
0027543254
-
"Silicon carbide UV photodiodes,"
-
vol. 40, p. 325, 1993.
-
D. M. Brown, E. T. Downey, M. Ghezzo, J. W. Kretchmer, R. J. Saia, Y. S. Liu. J. A. Edmond, G. Gati, J. M. Pimbley, and W. E. Schneider, "Silicon carbide UV photodiodes," IEEE Trans. Electron Devices, vol. 40, p. 325, 1993.
-
IEEE Trans. Electron Devices
-
-
Brown, D.M.1
Downey, E.T.2
Ghezzo, M.3
Kretchmer, J.W.4
Saia, R.J.5
Liu, Y.S.6
Edmond, J.A.7
Gati, G.8
Pimbley, J.M.9
Schneider, W.E.10
-
7
-
-
0029369545
-
"Visible-blind ultraviolet photodetectors based on GaN p-n junction,"
-
vol. 31, p. 1781. 1995 and references therein.
-
Q. Chen, M. A. Khan, C. J. Sun, and J. W. Yang, "Visible-blind ultraviolet photodetectors based on GaN p-n junction," Electron. Lett., vol. 31, p. 1781. 1995 and references therein.
-
Electron. Lett.
-
-
Chen, Q.1
Khan, M.A.2
Sun J, C.3
Yang, J.W.4
-
8
-
-
0029345963
-
"Amorphous silicon-silicon carbide photodiodes with excellent sensitivity and selectivity in the vacuum ultraviolet spectrum,"
-
vol. 67, p. 335, 1995.
-
G. de Cesare, F. Irrera, F. Palma, M. Tucci, E. Jannitti, P. Naletto, and P. Nicolosi, "Amorphous silicon-silicon carbide photodiodes with excellent sensitivity and selectivity in the vacuum ultraviolet spectrum," Appl. Phys. Lett., vol. 67, p. 335, 1995.
-
Appl. Phys. Lett.
-
-
De Cesare, G.1
Irrera, F.2
Palma, F.3
Tucci, M.4
Jannitti, E.5
Naletto, P.6
Nicolosi, P.7
-
9
-
-
33747310527
-
-
1974, ch. 4., p. 159.
-
3. Taue, Amorphous and Liquid Semiconductors,J. Taue, Ed. London: Plenum, London, 1974, ch. 4., p. 159.
-
Amorphous and Liquid Semiconductors,J. Taue, Ed. London: Plenum, London
-
-
Taue1
-
11
-
-
0027585362
-
"Structural, optical and electronic properties of wide band gap amorphous carbon-silicon alloys,"
-
vol. 2, p. 773, 1993.
-
G. de Cesare, F. Galluzzi. G. Guattari, G. Leo, R. Vincenzoni, and E. Bemporad, "Structural, optical and electronic properties of wide band gap amorphous carbon-silicon alloys," Diam. and Rel. Mater., vol. 2, p. 773, 1993.
-
Diam. and Rel. Mater.
-
-
De Cesare, G.1
Galluzzi, F.2
Guattari, G.3
Leo, G.4
Vincenzoni, R.5
Bemporad, E.6
-
12
-
-
0027847304
-
"'Ambipolar diffusion coefficient in a-SiC:H alloys in steady state and transient grating measurements,"
-
1993, vol. 297, p. 497.
-
H. Weinert, M. Petrauskas, J. Kolenda, A. Galecka, F. Wang, and R. Schwarz, "'Ambipolar diffusion coefficient in a-SiC:H alloys in steady state and transient grating measurements," Amorphous Silicon Technology, E. A. Schiff, M. J. Thompson, A. Madan, K. Tanaka, and P. G. Le Comber, Eds. Pittsburgh: Mat. Res. Soc., 1993, vol. 297, p. 497.
-
Amorphous Silicon Technology, E. A. Schiff, M. J. Thompson, A. Madan, K. Tanaka, and P. G. Le Comber, Eds. Pittsburgh: Mat. Res. Soc.
-
-
Weinert, H.1
Petrauskas, M.2
Kolenda, J.3
Galecka, A.4
Wang, F.5
Schwarz, R.6
-
13
-
-
36849112146
-
"Randgap dependence and related features of radiation ionization energies in semiconductors,"
-
vol. 39, p. 2029, 1968.
-
C. A. Klein, "Randgap dependence and related features of radiation ionization energies in semiconductors," J. Appl. Phys., vol. 39, p. 2029, 1968.
-
J. Appl. Phys.
-
-
Klein, C.A.1
-
14
-
-
0015361032
-
"Pair-production energies in silicon and germanium bombarded with low-energy electrons," J
-
vol. 43, p. 3202, 1972.
-
J. R. Fieberg and R. S. Muller, "Pair-production energies in silicon and germanium bombarded with low-energy electrons," J. Appl. Phys., vol. 43, p. 3202, 1972.
-
Appl. Phys.
-
-
Fieberg, J.R.1
Muller, R.S.2
-
15
-
-
6244283533
-
"Hot carrier effects in the collection efficiency of solar cells: A-Si:H,"
-
vol. 40, p. 694, 1982.
-
A. Rothwarf, "Hot carrier effects in the collection efficiency of solar cells: a-Si:H," Appl. Phys. Lett., vol. 40, p. 694, 1982.
-
Appl. Phys. Lett.
-
-
Rothwarf, A.1
-
16
-
-
0003679845
-
-
vol. 11, R. K. Willardson and A. C. Beer, Eds. New York: Academic. 1975.
-
H. J. Hovel, Semiconductor and Semimetals Solar Cells, vol. 11, R. K. Willardson and A. C. Beer, Eds. New York: Academic. 1975.
-
Semiconductor and Semimetals Solar Cells
-
-
Hovel, H.J.1
-
17
-
-
0005306202
-
"Transport in hydrogenated amorphous silicon p-i-n solar cells," .J
-
vol. 53, no. 4, p. 3350, 1982.
-
R. S. Crandall, "Transport in hydrogenated amorphous silicon p-i-n solar cells," .J. Appl. Phys., vol. 53, no. 4, p. 3350, 1982.
-
Appl. Phys.
-
-
Crandall, R.S.1
-
18
-
-
33747292330
-
-
1981, p. 118
-
S. S. Fonash, Solar Cell Device 'Physics, J. Demon, Ed. London, Academic, 1981, p. 118
-
Solar Cell Device 'Physics, J. Demon, Ed. London, Academic
-
-
Fonash, S.S.1
-
19
-
-
0029306019
-
"Tunable photodetectors based on amorphous Si/SiC:H heterostructures,"
-
vol. 42, p. 835, 1995.
-
G. de Cesare, F. Irrera, F. Lemmi, and F. Palma, "Tunable photodetectors based on amorphous Si/SiC:H heterostructures," IEEE Trans. Electron Devices, vol. 42, p. 835, 1995.
-
IEEE Trans. Electron Devices
-
-
De Cesare, G.1
Irrera, F.2
Lemmi, F.3
Palma, F.4
-
20
-
-
0029637578
-
"Amorphous Si/SiC three color detectors with adjustable threshold,"
-
vol. 66, p. 1178, 1995.
-
G. de Cesare, F. Iirera, F. Lemmi, and F. Palma, "Amorphous Si/SiC three color detectors with adjustable threshold," Appl. Phys. Lett.. vol. 66, p. 1178, 1995.
-
Appl. Phys. Lett..
-
-
De Cesare, G.1
Iirera, F.2
Lemmi, F.3
Palma, F.4
-
21
-
-
9344262261
-
"Variable spectral > response photodetector based on crystalline/amorphous silicon heterostructure,"
-
vol. 198-200, p. 1189, 1996.
-
G. de Cesare, F. Galluzzi, F. Irrera. D. Lauta, F. Ferrazza, and M. Tucci, "Variable spectral > response photodetector based on crystalline/amorphous silicon heterostructure," J. Non-Cryst. Solids, vol. 198-200, p. 1189, 1996.
-
J. Non-Cryst. Solids
-
-
De Cesare, G.1
Galluzzi, F.2
Irrera, F.3
Lauta, D.4
Ferrazza, F.5
Tucci, M.6
|