메뉴 건너뛰기




Volumn 43, Issue 9, 1996, Pages 1351-1356

Solar-blind UV photodetectors for large area applications

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ENERGY GAP; OPTIMIZATION; QUANTUM EFFICIENCY; SEMICONDUCTOR DEVICE STRUCTURES; SILICON CARBIDE; SUBSTRATES; THIN FILM DEVICES; ULTRAVIOLET RADIATION; WAVEFORM ANALYSIS;

EID: 0030243117     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.535318     Document Type: Article
Times cited : (62)

References (21)
  • 1
    • 0018478296 scopus 로고    scopus 로고
    • "MicroChannel plated detector,"
    • vol. 162, pp. 587-601, 1979.
    • J. L. Wiza, "MicroChannel plated detector," Nucl. Instr. Met., vol. 162, pp. 587-601, 1979.
    • Nucl. Instr. Met.
    • Wiza, J.L.1
  • 5
    • 0028493503 scopus 로고    scopus 로고
    • "Response analysis in the 300-2500 a spectral range of ultravioletenhanced CCD's,"
    • vol. 33, no. 8, pp. 2544-2552, 1994.
    • G. Naletto, G. Tondello, G. Bonanno, R. Di Benedetto, and S. Scudieri, "Response analysis in the 300-2500 A spectral range of ultravioletenhanced CCD's," Opt. Eng., vol. 33, no. 8, pp. 2544-2552, 1994.
    • Opt. Eng.
    • Naletto, G.1    Tondello, G.2    Bonanno, G.3    Di Benedetto, R.4    Scudieri, S.5
  • 7
    • 0029369545 scopus 로고    scopus 로고
    • "Visible-blind ultraviolet photodetectors based on GaN p-n junction,"
    • vol. 31, p. 1781. 1995 and references therein.
    • Q. Chen, M. A. Khan, C. J. Sun, and J. W. Yang, "Visible-blind ultraviolet photodetectors based on GaN p-n junction," Electron. Lett., vol. 31, p. 1781. 1995 and references therein.
    • Electron. Lett.
    • Chen, Q.1    Khan, M.A.2    Sun J, C.3    Yang, J.W.4
  • 8
    • 0029345963 scopus 로고    scopus 로고
    • "Amorphous silicon-silicon carbide photodiodes with excellent sensitivity and selectivity in the vacuum ultraviolet spectrum,"
    • vol. 67, p. 335, 1995.
    • G. de Cesare, F. Irrera, F. Palma, M. Tucci, E. Jannitti, P. Naletto, and P. Nicolosi, "Amorphous silicon-silicon carbide photodiodes with excellent sensitivity and selectivity in the vacuum ultraviolet spectrum," Appl. Phys. Lett., vol. 67, p. 335, 1995.
    • Appl. Phys. Lett.
    • De Cesare, G.1    Irrera, F.2    Palma, F.3    Tucci, M.4    Jannitti, E.5    Naletto, P.6    Nicolosi, P.7
  • 13
    • 36849112146 scopus 로고    scopus 로고
    • "Randgap dependence and related features of radiation ionization energies in semiconductors,"
    • vol. 39, p. 2029, 1968.
    • C. A. Klein, "Randgap dependence and related features of radiation ionization energies in semiconductors," J. Appl. Phys., vol. 39, p. 2029, 1968.
    • J. Appl. Phys.
    • Klein, C.A.1
  • 14
    • 0015361032 scopus 로고    scopus 로고
    • "Pair-production energies in silicon and germanium bombarded with low-energy electrons," J
    • vol. 43, p. 3202, 1972.
    • J. R. Fieberg and R. S. Muller, "Pair-production energies in silicon and germanium bombarded with low-energy electrons," J. Appl. Phys., vol. 43, p. 3202, 1972.
    • Appl. Phys.
    • Fieberg, J.R.1    Muller, R.S.2
  • 15
    • 6244283533 scopus 로고    scopus 로고
    • "Hot carrier effects in the collection efficiency of solar cells: A-Si:H,"
    • vol. 40, p. 694, 1982.
    • A. Rothwarf, "Hot carrier effects in the collection efficiency of solar cells: a-Si:H," Appl. Phys. Lett., vol. 40, p. 694, 1982.
    • Appl. Phys. Lett.
    • Rothwarf, A.1
  • 16
    • 0003679845 scopus 로고    scopus 로고
    • vol. 11, R. K. Willardson and A. C. Beer, Eds. New York: Academic. 1975.
    • H. J. Hovel, Semiconductor and Semimetals Solar Cells, vol. 11, R. K. Willardson and A. C. Beer, Eds. New York: Academic. 1975.
    • Semiconductor and Semimetals Solar Cells
    • Hovel, H.J.1
  • 17
    • 0005306202 scopus 로고    scopus 로고
    • "Transport in hydrogenated amorphous silicon p-i-n solar cells," .J
    • vol. 53, no. 4, p. 3350, 1982.
    • R. S. Crandall, "Transport in hydrogenated amorphous silicon p-i-n solar cells," .J. Appl. Phys., vol. 53, no. 4, p. 3350, 1982.
    • Appl. Phys.
    • Crandall, R.S.1
  • 19
    • 0029306019 scopus 로고    scopus 로고
    • "Tunable photodetectors based on amorphous Si/SiC:H heterostructures,"
    • vol. 42, p. 835, 1995.
    • G. de Cesare, F. Irrera, F. Lemmi, and F. Palma, "Tunable photodetectors based on amorphous Si/SiC:H heterostructures," IEEE Trans. Electron Devices, vol. 42, p. 835, 1995.
    • IEEE Trans. Electron Devices
    • De Cesare, G.1    Irrera, F.2    Lemmi, F.3    Palma, F.4
  • 20
    • 0029637578 scopus 로고    scopus 로고
    • "Amorphous Si/SiC three color detectors with adjustable threshold,"
    • vol. 66, p. 1178, 1995.
    • G. de Cesare, F. Iirera, F. Lemmi, and F. Palma, "Amorphous Si/SiC three color detectors with adjustable threshold," Appl. Phys. Lett.. vol. 66, p. 1178, 1995.
    • Appl. Phys. Lett..
    • De Cesare, G.1    Iirera, F.2    Lemmi, F.3    Palma, F.4
  • 21
    • 9344262261 scopus 로고    scopus 로고
    • "Variable spectral > response photodetector based on crystalline/amorphous silicon heterostructure,"
    • vol. 198-200, p. 1189, 1996.
    • G. de Cesare, F. Galluzzi, F. Irrera. D. Lauta, F. Ferrazza, and M. Tucci, "Variable spectral > response photodetector based on crystalline/amorphous silicon heterostructure," J. Non-Cryst. Solids, vol. 198-200, p. 1189, 1996.
    • J. Non-Cryst. Solids
    • De Cesare, G.1    Galluzzi, F.2    Irrera, F.3    Lauta, D.4    Ferrazza, F.5    Tucci, M.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.