Sampling depth of total electron and fluorescence measurements in Si L- and K-edge absorption spectroscopy

Applied Surface Science

Volumn 99, Issue 4, 1996, Pages 303-312

  Kasrai, M ^a   Lennard, W N ^a   Brunner, R W ^a   Bancroft, G M ^a   Bardwell, J A ^b   Tan, K H ^c  

^a UNIVERSITY OF WESTERN ONTARIO   (Canada)

^b NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^c UNIVERSITY OF WISCONSIN MADISON   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; FLUORESCENCE; MATHEMATICAL MODELS; SILICA; SILICON; SOLIDS;

ELECTRON YIELD (EY) TECHNIQUES; FLUORESCENCE YIELD (FY) TECHNIQUES; X RAY ABSORPTION NEAR EDGE STRUCTURE (XANES) SPECTRA;

ABSORPTION SPECTROSCOPY;

EID: 0030215946     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/0169-4332(96)00454-0     Document Type: Article

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