Selective epitaxy of Si1-xGex layers for complementary metal oxide semiconductor applications

Journal of the Electrochemical Society

Volumn 150, Issue 4, 2003, Pages

  Menon, C ^a   Lindgren, A C ^a   Persson, P O A ^b   Hultman, L ^b   Radamson, H H ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b LINKÖPING UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; EPITAXIAL GROWTH; MORPHOLOGY; MOSFET DEVICES; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SUBSTRATES; SURFACE ROUGHNESS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

CROSS-SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; DOPANT; HIGH-RESOLUTION RECIPROCAL LATTICE MAPPING;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0037396723     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1556599     Document Type: Article

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