Selective epitaxial growth of Si1-xGex/Si strained-layers in a tubular hot-wall low pressure chemical vapor deposition system

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 15, Issue 1, 1997, Pages 138-141

  Wang, Wei Chung ^a   Denton, John P ^a   Neudeck, Gerold W ^a   Lee, I Ming ^a   Takoudis, Christos G ^a   Koh, Michael T K ^a   Kvam, Eric P ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000839388     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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