Integration of PECVD tungsten nitride as a barrier layer for copper metallization

Materials Research Society Symposium - Proceedings

Volumn 564, Issue , 1999, Pages 321-326

  Ivanova, A R ^a   Galewski, C J ^a   Sans, C A ^a   Seidel, T E ^a   Grunow, S ^b   Kumar, K ^b   Kaloyeros, A E ^b  

^a AIXTRON Inc   (United States)

^b STATE UNIVERSITY OF NEW YORK   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; ASPECT RATIO; COPPER; METALLIZING; NUCLEATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SUBSTRATES; TUNGSTEN COMPOUNDS;

BARRIER LAYER; SECCO ETCH PITS; TUNGSTEN NITRIDE;

ELECTRIC CONTACTS;

EID: 0033279576     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-564-321     Document Type: Article

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