Investigation of copper metallization induced failure of diode structures with and without a barrier layer

Microelectronic Engineering

Volumn 33, Issue 1-4, 1997, Pages 283-291

  Baumann, J ^a   Kaufmann, Ch ^a   Rennau, M ^a   Werner, Th ^a   Gessner, T ^a  

^a CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER; COPPER COMPOUNDS; ELECTRIC BREAKDOWN OF SOLIDS; HIGH TEMPERATURE EFFECTS; SEMICONDUCTING FILMS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DIODES; SIMULATED ANNEALING; STOICHIOMETRY; TITANIUM NITRIDE;

BARRIER LAYER; COPPER METALLIZATION; HYDROGEN ATMOSPHERE ANNEALING; NITROGEN/TITANIUM RATIO;

METALLIZING;

EID: 0000154247     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0167-9317(96)00056-1     Document Type: Article

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