SCOPUS 정보 검색 플랫폼

Volumn 30, Issue 12, 2001, Pages 1602-1608

"Seedless" electrochemical deposition of copper on physical vapor deposition-W2N liner materials for ultra large scale integration (ULSI) devices

(3) Shaw, Michael J a,b Grunow, Stephan c Duquette, David J a

a RENSSELAER POLYTECHNIC INSTITUTE (United States)

b SANDIA NATIONAL LABORATORIES (United States)

c STATE UNIVERSITY OF NEW YORK (United States)

Author keywords

Copper; Diffusion barrier; Electrochemical; Seedless; Tungsten nitride

Indexed keywords

ADHESION; COPPER; ELECTRIC POTENTIAL; ELECTRODEPOSITION; ELECTROLYTIC REDUCTION; FILM GROWTH; NUCLEATION; PHYSICAL VAPOR DEPOSITION; REACTION KINETICS; THERMODYNAMIC STABILITY; THIN FILMS; ULSI CIRCUITS;

DIFFUSION BARRIER; NERNST EQUATION; PLATTING BATH CHEMISTRY;

TUNGSTEN COMPOUNDS;

EID: 0035737912 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-001-0179-8 Document Type: Article

Times cited : (26)

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