Kinetic and mechanistic studies of the chemical vapor deposition of tungsten nitride from bis(tertbutylimido)bis(tertbutylamido)tungsten

Journal of Physical Chemistry B

Volumn 105, Issue 17, 2001, Pages 3549-3556

  Crane, Elizabeth L ^a   Chiu, Hsin Tien ^b   Nuzzo, Ralph G ^a  

^a University of Illinois at Urbana Champaign   (United States)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BISTERTBUTYLIMIDOBISTERTBUTYLAMIDOTUNGSTEN; LIGANDS; PRECURSOR; TERT-BUTYLAMINE; TUNGSTEN NITRIDE;

ACTIVATION ENERGY; ADDITION REACTIONS; ADSORPTION; ANNEALING; AUGER ELECTRON SPECTROSCOPY; CHEMICAL ACTIVATION; CHEMICAL BONDS; CHEMICAL VAPOR DEPOSITION; DECOMPOSITION; GROWTH (MATERIALS); PYROLYSIS; REACTION KINETICS;

TUNGSTEN COMPOUNDS;

EID: 0037013386     PISSN: 15206106     EISSN: None     Source Type: Journal    
DOI: 10.1021/jp003490q     Document Type: Article

References (50)

1. Matsuhashi, H.; Nishikawa, S. Jpn. J. Appl. Phys., Part 1 1994, 33, 1293-1297.
2. Lee, C. W.; Kirn, Y. T. Solid-State Electron. 1995, 38, 679-682.
3. Mun, J. K.; Lim, J. W.; Lee, J. J.; Yang, J. W. Microelectron. Reliability 1999, 39, 1793-1800.
4. Claflin, B.; Binger, M.; Lucovsky, G. J. Vac. Sei. Technol, A 1998, 16, 1757-1761.
5. Meunier, C.; Monteil, C.; Savall, C.; Plamino, F.; Weber, J.; Berjoan, R.; Durand, J. Appl. Surf. Sei. 1998, 125, 313-320.
6. Marcus, S. D.; Foster, R. F. Thin Solid Films 1993, 256, 330-333.
7. Tsai, M. H.; Sun, S. C.; Chiu, H. T.; Chuang, S. H. Appl. Phys. Lett. 1996, 68, 1412-1414.
8. Lee, C. W.; Kirn, Y. T.; Lee, C.; Lee, J. Y.; Min, S.-K.; Park, Y. W. J. Vac. Sei. Technol., B 1994, 12, 69-72.
9. Kelsey, J. E.; Goldberg, C.; Nuesca, G.; Peterson, G.; Kaloyeros, A. E.; Arkles, B. J. Vac. Sei. Technol., B 1999, 17, 1101-1104.
10. Chiu, H.-T.; Chuang, S.-H. J. Mater. Res. 1993, 8, 1353-1360.
11. Ganguli, S.; Chen, L.; Levine, T.; Zheng, B.; Chang, M. J. Vac. Sei. Technol., B 2000, 18, 237-241.
12. Gokce, O. H.; Amin, S.; Ravindra, N. M.; Szostak, D. J.; Paff, R. J.; Fleming, J. G.; Galewski, C. J.; Shallenberger, J.; Eby, R. Tliin Solid Films 1999, 353, 149-156.
13. Li, H.; Jin, S.; Bender, H.; Lanckmans, F.; Heyvaert, I.; Maex, K.; Froyen, L. J. Vac. Sei. Technol., B 2000, 18, 242-251.
14. Lin, J.; Tsukune, A.; Suzuki, T.; Yamada, M. J. Vac. Sei. Technol., A 1999, 17, 936-938.
15. Fleming, J. G.; Osmun-Roherty, E.; Smith, P. M.; Custer, J. S.; Kim, Y.-D.; Kacsich, T.; Nicolet, M.-A.; Galewski, C. J. Thin Solid Films 1998, 320, 10-14.
16. Lai, K. K.; Mak, A. W.; Wendung, T. P. H. F.; Jian, P.; Hathcock, B. Thin Solid Films 1998, 332, 329-334.
17. Lin, J.; Tsukune, A.; Suzuki, T.; Yamada, M. J. Vac. Sei. Technol., A 1998, 76,611-614.
18. Lee, C. W.; Kim, Y. T.; Lee, J. Y. Appl. Phys. Lett. 1994, 64, 619-621.
19. Lee, C. W.; Kim, Y. T. Appl. Phys. Lett. 1994, 65, 965-967.
20. Chang, K.-M.; Yeh, T.-H.; Deng, I.-C. J. Appl. Phys. 1997, 81, 3670-3676.
21. Park, B. L.; Ko, K.-H.; Kim, Y. S.; Ha, J. M.; Park, Y. W.; Lee, S. L; Lee, H.-D.; Lee, M. B.; Chung, U. L; Koh, Y. B.; Lee, M. Y. J. Electron. Mater. 1997, 25, L1-L5.
22. Kim, Y. T.; Lee, C. W. J. Appl. Phys. 1994, 76, 542-545.
23. Kim, Y. T.; Lee, C. W.; Min, S.-K. Jpn. J. Appl. Phys. 1993, 32, 6126-6131.
24. Nicolet, M.-A. In Tungsten and Other Refractory Metals for VLSI Applications II; Broadbent, E. K., Ed.; MRS Publishers: Pittsburgh, PA, 1987; pp 19-26.
25. Wittmer, M. Thin Solid Films 1983, 707, 99-110.
26. Ensinger, W.; Kiuchi, M. Surf. Coat. Technol. 1996, 84, 425428.
27. Toth, L. E. Transition Metal Carbides and Nitrides; Academic Press: New York, 1971.
28. Weil, K. S.; Kim, J. Y.; Kumta, P. N. Mater. Lett. 1999,39,292-297.
29. Travis, E. O.; Paulson, W. M.; Pintchovski, F.; Boeck, B.; Parrillo, L. C.; Kottke, M. L.; Fu, K.-Y.; Rice Jr., M. J.; Price, J. B.; Eichman, E. C. Proc. Int. Electron Devices Meeting, December I990; IEEE: New York, 1990; pp 47-50.
30. Hillman, J. T.; Triggs, W. M.; Rice, M. J., Jr.; Sommer, B.; Chruley, M.; Bell, C. In Advanced Metallization for ULS1 Applications; Eichman, E. C., Rana, V.; Joshi, R., Eds. Materials Research Society: Pittsburgh, PA, 1992; pp 311-317.
31. Hillman, J. T.; Studiner, D. W. 1M1C VLSI Multilevel Interconnection Conference Proceedings; Wade, T. E., Eds.; IMIC: New York, 1992;p 295.
32. Rocke, M.; Schneegans, M. J. Vac. Sei. Technol., B 1988, 1113.
33. Ting, C. Y. J. Vac. Sei. Techno!. 1982, 21, 14.
34. Hong, Q. Z.; Jeng, S. P.; Havemann, R. H.; Tsai, H. L.; Liu, H. Y. J. Appl. Phys. 1995, 78, 7419-7421.
35. Hashimoto, K.; Onoda, H. Appl. Phys. Lett. 1989, 10, 120-122.
36. Chun, J.-S.; Petrov, L; Greene, J. E. J. Appl. Phys. 1999,86,3633-3641.
37. Wang, S.-Q. MRS Bull. 1994, 19, 30.
38. Bent, B. E.; Nuzzo, R. G.; Dubois, L. H. /. Am. Chem. Soc. 1989, III, 1634-1644.
39. Nugent, W. A.; Harlow, R. L. Inorg. Chem. 1980, 19, 777.
40. Lee, C. W.; Kim, Y. T. Solid State Electron. 1995, 38, 542.
41. Reid, J. S.; Kolawa, E.; Ruiz, R. P.; Nicolet, M.-A. Thin Solid Films 1993, 236, 319.
42. Affolter, K.; Kattelus, H.; Nicolet, M.-A. Mat. Res. Soc. Symp. Proc. 1985, 47, 167.
43. Nakajima, T.; Watanbe, K.; Watanbe, N. J. Electrochem. Soc. 1987, 754,3175.
44. Although this peak appears to reach a maximum at 850 K, this is an experimental artifact resulting from the slowing of the heating ramp rate as the crystal approaches its temperature set point.
45. Dubois, L. H.; Zegarski, B. R.; Kao, C.-T.; Nuzzo, R. G. Surf. Sei. 1990, 236, 77-84.
46. Kevan, S. D. Ph.D. Thesis, University of California, Berkeley, CA, 1980.
47. Redhead, P. A. Vacuum 1962, 72, 203-211.
48. Anhaus, J. T.; Kee, T. P.; H., S. M.; Schrock, R. R. J. Am. Chem. Soc. 1990, 772, 1642-1643.
49. Williams, D. S.; Schrock, R. R. Organomet. 1993, 72, 1148-1160.
50. Laplaza, C. E.; Cummins, C. C. Science 1995, 268, 861-863.