메뉴 건너뛰기




Volumn 3236, Issue , 1997, Pages 82-93

Performance of positive tone chemically amplified resists for next generation photo mask fabrication

Author keywords

Air borne contaminant; Ammonia; Chemically amplified resist; E beam resist; Post coating delay stability; Post exposure bake; Post exposure delay stability; Prebake

Indexed keywords

AMMONIA; FABRICATION; IMPURITIES; OPTICAL INSTRUMENTS; PHOTOMASKS; PHOTORESISTORS; PHOTORESISTS;

EID: 0002329937     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.301231     Document Type: Conference Paper
Times cited : (10)

References (6)
  • 1
    • 0029223294 scopus 로고
    • EBR900 processes in e-beam and laser beam lithographies for photo mask fabrication
    • M. Kurihara, M. Komada, H. Moro-oka, N. Hayashi, and H. Sano, "EBR900 processes in e-beam and laser beam lithographies for photo mask fabrication", Proc. SPIE, Vol.2437, 240 (1995).
    • (1995) Proc. SPIE , vol.2437 , pp. 240
    • Kurihara, M.1    Komada, M.2    Moro-oka, H.3    Hayashi, N.4    Sano, H.5
  • 2
    • 0038431410 scopus 로고
    • Application of chemically amplified positive resist PSR for advanced mask making
    • K. Kazama, F. Murai, T. Khono, T. Sakamizu, and S. Okazaki, "Application of chemically amplified positive resist PSR for advanced mask making", J. Photopolym. Sci Technol., Vol.6, No.1, 49 (1993).
    • (1993) J. Photopolym. Sci Technol , vol.6 , Issue.1 , pp. 49
    • Kazama, K.1    Murai, F.2    Khono, T.3    Sakamizu, T.4    Okazaki, S.5
  • 4
    • 0038769326 scopus 로고
    • Application of Chemically Amplified Resists to Photo mask Fabrication
    • M. Arai, H. Inomata, T. Nishimura, M. Kurihara, and N. Hayashi, "Application of Chemically Amplified Resists to Photo mask Fabrication", Proc. SPIE, Vol.2512, 74 (1995).
    • (1995) Proc. SPIE , vol.2512 , pp. 74
    • Arai, M.1    Inomata, H.2    Nishimura, T.3    Kurihara, M.4    Hayashi, N.5
  • 5
    • 0029226737 scopus 로고
    • Effect of reducing contaminant concentration when patterning a chemically amplified positive resist
    • A. Oikawa, Y. Hatakeyama, Y. Ikeda, Y. Kokubo, M. Tanishima, N. Santoh, and N. Abe, "Effect of reducing contaminant concentration when patterning a chemically amplified positive resist", Proc. SPIE, 2438, 599 (1995).
    • (1995) Proc. SPIE , vol.2438 , pp. 599
    • Oikawa, A.1    Hatakeyama, Y.2    Ikeda, Y.3    Kokubo, Y.4    Tanishima, M.5    Santoh, N.6    Abe, N.7
  • 6
    • 0029224104 scopus 로고
    • Contamination control for processing DUV chemically amplified photoresists
    • J.C. Vigil, M.W. Barrick, amd T.H. Grafe, "Contamination control for processing DUV chemically amplified photoresists", Proc. SPIE, 2438, 626 (1995).
    • (1995) Proc. SPIE , vol.2438 , pp. 626
    • Vigil, J.C.1    Barrick, M.W.2    Grafe, T.H.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.