A high performance E-beam resist coupling excellent dry etch resistance and sub 100nm resolution for advanced mask and device making

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4343, Issue 1, 2001, Pages 268-277

  Huang, Wu Song ^a   Kwong, Ranee ^a   Moreau, Wayne ^a   Lang, Robert ^a   Robinson, Christopher ^a   Medeiros, David ^b   Petrillo, Karen ^b   Aviram, Ari ^b   Mahorowala, Arpan ^b   Angelopoulos, Marie ^b   Magg, Christopher ^a   Lawliss, Mark ^a   Faure, Thomas ^a  

^a IBM MICROELECTRONICS   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; DRY ETCHING; ELECTRON BEAMS; ELECTRON SCATTERING; PHOTORESISTS;

ELECTRON BEAM RESISTS;

MASKS;

EID: 0005047031     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.436656     Document Type: Article

References (13)

1. A 180 nm mask fabrication process using ZEP 7000, Multipass gray, GHOST, and dry etch for MEBES 5000
2. A CA resisi with high sensitivity and sub 100nm resolution for advanced mask making
3. Performance of a chemically amplified positive resist to next generation photomask fabrication
4. Improvement of CD accuracy for next generation reticles using HL-800M and CA resist
5. Comparison of writing strategies subject to resist heating
6. The deprotection of a low activation energy photoresist and its application to outgassing and etch behavior
7. Polymeric base additives for lithographic improvement in DUV system
8. Probing the environmental stability and bake latitudes of acetal vs. ketal protected polyvinylphenol DUV resist systems
9. EL-4, a new generation electron-beam lithography system
10. Variable axis immersion lens (VAIL)
11. Projection reduction exposure with variable axis immersion lenses: Next generation lithography