Evaluation of Shipley XP2040d positive chemically amplified resist for SCALPEL mask fabrication

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4343, Issue , 2001, Pages 771-780

  Lu, B ^a   Masnyj, Z ^a   Mangat, P ^a   Nordquist, K ^a   Ainley, E ^a   Resnick, D J ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON BEAMS; MASKS; SILICON WAFERS; SPIN COATING; THERMAL EFFECTS;

CHEMICALLY AMPLIFIED RESISTS; MASK FABRICATION;

PHOTORESISTS;

EID: 0034759383     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.436703     Document Type: Conference Paper

References (7)

1. Intra- and Intra-membrane resist critical dimension uniformity across a SCALPEL mask
2. Process optimization of a chemically amplified negative resist for electron beam exposure and mask making applications
3. The lithographic performance of an environmentally stable chemically amplified photoresist (ESCAP)
4. Comparison of negative resists for 100 nm electron-beam direct write and mask making applications
5. New ESCAP-type resist with enhanced etch resistance and its application for future DRAM and logic devices
6. Investigation of environmental stability in chemically amplified resist