Process optimization of a chemically amplified negative resist for electron beam exposure and mask making applications

Microelectronic Engineering

Volumn 46, Issue 1, 1999, Pages 375-378

  Ainley, E ^a   Nordquist, K ^a   Resnick, D J ^a   Carr, D W ^b   Tiberio, R C ^b  

^a MOTOROLA INC   (United States)

^b Department of Theoretical and Applied Mechanics and the Cornell Nanofabrication Facility   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON BEAM LITHOGRAPHY; MASKS; OPTICAL RESOLVING POWER; PHOTOSENSITIVITY;

CHEMICALLY AMPLIFIED NEGATIVE RESISTS;

PHOTORESISTS;

EID: 0033132678     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(99)00108-2     Document Type: Article

References (5)

1. 1. E. Ainley, presented at the 42nd EIPBN International Symposium, 1998.
2. 2. L. E. Ocola, presented at the 42nd EIPBN International Symposium, 1998
3. 3. L. R. Harriot, J. Vac. Sci. Technol. B 15, (1997).
4. 4. K. Nordquist, J. Vac. Sci. Technol. B 15, (1997).
5. 5. D. P. Mancini, Proceedings SPIE Vol. 2723, (1996).