Evaluation of an advanced chemically amplified resist for next generation lithography mask fabrication

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4186, Issue , 2001, Pages 707-716

  Magg, C ^a   Lercel, M ^a   Lawliss, M ^a   Kwong, R ^a   Huang, W S ^a   Angelopoulos, M ^a  

^a IBM   (United States)

Author keywords

Chemically amplified resist; Critical dimension uniformity; e beam lithography; Mask; Membrane; Next Generation Lithography; PREVAIL; SCALPEL; X ray

Indexed keywords

CRYSTAL IMPURITIES; ELECTRON BEAM LITHOGRAPHY; EXPOSURE CONTROLS; FINITE DIFFERENCE METHOD; MASKS; SEMICONDUCTOR DEVICE MANUFACTURE;

CHEMICALLY AMPLIFIED (CA) RESISTS;

PHOTORESISTS;

EID: 0035047404     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.410750     Document Type: Conference Paper

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