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Volumn 4186, Issue , 2001, Pages 707-716

Evaluation of an advanced chemically amplified resist for next generation lithography mask fabrication

Author keywords

Chemically amplified resist; Critical dimension uniformity; e beam lithography; Mask; Membrane; Next Generation Lithography; PREVAIL; SCALPEL; X ray

Indexed keywords

CRYSTAL IMPURITIES; ELECTRON BEAM LITHOGRAPHY; EXPOSURE CONTROLS; FINITE DIFFERENCE METHOD; MASKS; SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0035047404     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.410750     Document Type: Conference Paper
Times cited : (4)

References (19)
  • 5
    • 0033309258 scopus 로고    scopus 로고
    • Next generation lithography mask development at the NGL mask center of competency
    • (1999) Proc. SPIL , vol.3873 , pp. 804-813
    • Lercel, M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.