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Volumn 4186, Issue , 2001, Pages 707-716
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Evaluation of an advanced chemically amplified resist for next generation lithography mask fabrication
a
a
IBM
(United States)
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Author keywords
Chemically amplified resist; Critical dimension uniformity; e beam lithography; Mask; Membrane; Next Generation Lithography; PREVAIL; SCALPEL; X ray
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Indexed keywords
CRYSTAL IMPURITIES;
ELECTRON BEAM LITHOGRAPHY;
EXPOSURE CONTROLS;
FINITE DIFFERENCE METHOD;
MASKS;
SEMICONDUCTOR DEVICE MANUFACTURE;
CHEMICALLY AMPLIFIED (CA) RESISTS;
PHOTORESISTS;
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EID: 0035047404
PISSN: 0277786X
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1117/12.410750 Document Type: Conference Paper |
Times cited : (4)
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References (19)
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