1.3-μm InGaAs(N)/GaAs vertical-cavity lasers

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4994, Issue , 2003, Pages 139-151

  Mogg, S ^a   Sundgren, P ^a   Asplund, C ^a   Hammar, M ^a   Christiansson, U ^b   Aggerstam, T ^b   Oscarsson, V ^b   Runnstrom C ^b   Odling E ^b   Malmquist, J ^b  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b Mitel Semiconductor AB   (Sweden)

Author keywords

GaInNAs; Highly strained InGaAs; Long wavelength; Quantum well laser; Vertical cavity laser

Indexed keywords

LIGHT TRANSMISSION; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS;

QUANTUM-WELL LASERS;

LASERS;

EID: 0141791280     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.482854     Document Type: Conference Paper

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