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Volumn 35, Issue 1, 1999, Pages 49-50

Near room-temperature continuous-wave operation of electrically pumped 1.55 μm vertical cavity lasers with InGaAsP/InP bottom mirror

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; ELECTRIC CURRENTS; LASER PULSES; MIRRORS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0033530981     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19990014     Document Type: Article
Times cited : (10)

References (15)
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  • 2
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    • UCHIYAMA, S., YOKOUCHI, Y., and NINOMIYA, T.: 'Continuous-wave operation up to 36°C of 1.3-μm GaInAsP-InP vertical cavity lasers', IEEE Photonics Technol. Lett., 1997, 9, (2), pp. 141-142
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  • 5
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    • 1.55 μm vertical-cavity surface-emitting lasers with wafer fused InGaAsP/InP-GaAs/AlAs DBRs
    • OHISO, Y., AMANO, C., ITOH, Y., TATENO, K., TADOKORO, , TAKENOUCHI, H., and KUROKAWA, T.: '1.55 μm vertical-cavity surface-emitting lasers with wafer fused InGaAsP/InP-GaAs/AlAs DBRs', Electron. Lett., 1996, 32, (16), pp. 1483-1485
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  • 7
    • 0031276424 scopus 로고    scopus 로고
    • Room-temperature pulsed operation of 1.3μm vertical-cavity lasers including bottom InGaAsP/InP multilayer Bragg mirrors
    • SALET, P., GABRIOT, F., PAGNOD-ROSSAIUX, PH., PLAIS, A., DEROUM, E., PASQUIER, J., and JACQUET, J.: 'Room-temperature pulsed operation of 1.3μm vertical-cavity lasers including bottom InGaAsP/InP multilayer Bragg mirrors', Electron. Lett., 1997, 33, (24), pp. 1408-1409
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  • 8
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    • GaInAsP/ InP semiconductor multilayer reflector grown by metalorganic vapor phase deposition and its application to surface emitting laser diode
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  • 10
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  • 12
    • 0032091503 scopus 로고    scopus 로고
    • InP-based 1.5 μm vertical cavity surface emitting laser with epitaxially grown defect free GaAs-based distributed Bragg reflectors
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  • 13
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    • Baltimore
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.