High-performance 1.2-μm Highly strained InGaAs/GaAs quantum well lasers

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2002, Pages 107-110

  Mogg, S ^a   Plaine, G ^a   Asplund, C ^a   Sundgren, P ^a   Baskar, K ^a   Mulot, M ^a   Schatz, R ^a   Hammar, M ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR LASERS; THERMOANALYSIS; WAVEGUIDES;

RIDGE-WAVEGUIDES (RWG);

QUANTUM WELL LASERS;

EID: 0036053488     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (18)

1. Static and dynamic characteristics of 1.29-μm GaInNAs ridge-waveguide laser diodes
2. Low threshold current density operation of GaInNAs quantum well lasers grown by metalorganic chemical vapour deposition
3. Low threshold current density GaAsSb quantum well (QW) lasers grown by metal organic chemical vapour deposition on GaAs substrates
4. InAs-InGaAs quantum dot VCSELs on GaAs substrates emitting at 1.3 μm
5. Low-threshold oxide-confined 1.3-mm quantum-dot laser
6. Improved photoluminescence properties of highly strained InGaAs/GaAs quantum wells grown by molecular-beam epitaxy
7. 1.21 μm continuous-wave operation of highly strained GaInAs quantum well lasers on GaAs substrates
8. Data transmisssion over single-mode fiber by using 1.2-μm uncooled GaInAs-GaAs laser for Gb/s local area network
9. Low-threshold, high-temperature operation of 1.2 μm InGaAs vertical cavity lasers
10. 1260-nm InGaAs vertical-cavity lasers
11. Applications of Raman amplification in 1.3-μm WDM systems
12. Gain spectra in GaAs double-heterostructure injection lasers
13. 1.2 μm GaAsP/InGaAs strain compensated single-quantum-well diode laser on GaAs using metal-organic chemical vapor deposition
14. Growth of highly strained GaInAs/GaAs quantum wells for 1.2 μm wavelength lasers
15. Defects in epitaxial multilayers
16. The temperature dependence of 1.3-and 1.5-μm compressively strained InGaAs(P) MQW semiconductor lasers
17. Experimental study of auger recombination, gain, and temperature sensitivity of 1.5 μm compressively strained semiconductor lasers