Morphology and photoluminescence studies of electrochemically etched heavily doped p-type GaAs in HF solution

Microelectronics Journal

Volumn 34, Issue 10, 2003, Pages 969-974

  Beji, L ^a   Sfaxi, L ^a   Ismail, B ^a   Zghal, S ^a   Hassen, F ^a   Maaref, H ^a  

^a FACULTÉ DES SCIENCES DE MONASTIR   (Tunisia)

Author keywords

Electrochemical etching; Gallium arsenide; Photoluminescence; Quantum confinement

Indexed keywords

EPITAXIAL GROWTH; ETCHING; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY;

QUANTUM CONFINEMENT;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0141732247     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2692(03)00183-6     Document Type: Conference Paper

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